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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC3446 description high collector-emitter breakdown voltage- : v (br)ceo = 500v(min) high switching speed wide area of safe operation applications designed for switching regulator and general purpose applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 800 v v ceo collector-emitter voltage 500 v v ebo emitter-base voltage 7 v i c collector current-continuous 3 a i cm collector current-peak 6 a i b b base current-continuous 1 a p c collector power dissipation @ t c =25 40 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3446 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 800 v v (br)ceo collector-emitter breakdown voltage i c = 5ma; r be = 500 v v (br)ebo emitter-base breakdown voltage i e = 1m a; i c = 0 7 v v ce (sat) collector-emitter saturation voltage i c = 1.5a; i b = 0.3a 1.0 v v be (sat) base-emitter saturation voltage i c = 1.5a; i b = 0.3a 1.5 v i cbo collector cutoff current v cb = 500v; i e = 0 10 a i ebo emitter cutoff current v eb = 5v; i c = 0 10 a h fe-1 dc current gain i c = 0.3a; v ce = 5v 15 50 h fe-2 dc current gain i c = 1.5a; v ce = 5v 8 f t current-gain?bandwidth product i c = 0.3a; v ce = 10v 18 mhz c ob output capacitance i e = 0; v cb = 10v; f test = 1.0mhz 50 pf switching times t on turn-on time 0.5 s t stg storage time 3.0 s t f fall time i c = 2a, i b1 = 0.4a; i b2 = -0.8a r l = 100 ; v cc = 200v 0.3 s ? h fe-1 classifications l m n 15-30 20-40 30-50 isc website www.iscsemi.cn 2 |
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